NXP Semiconductors MRFE6VP61K25HR6
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| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6VP61K25HR6 | 150 | 1 | 2h | |||||||||
| MRFE6VP61K25HR6CT-ND | 111 | 1 | Cut Tape | 2h | ||||||||
| MRFE6VP61K25HR6 | 29 | 1 | 1d | |||||||||
| 841-MRFE6VP61K25HR6 | 191 | 1 | Tape & Reel | 2h | ||||||||
| C1S233100241637 | 150 | 1 | Cut Tape | 20h |
Especificações técnicas
Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V
Inventory History
3 month trend: -79.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Baixe as fichas de dados e a documentação do fabricante para NXP Semiconductors MRFE6VP61K25HR6.
Future Electronics
Freescale Semiconductor
Farnell
Engineering Resources
View Evaluation kits and Reference designs for NXP Semiconductors MRFE6VP61K25HR6.
Peças relacionadas
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RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
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RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
NXP Semiconductors MRFE6VP5600HR5
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
Descrições
Descrições de NXP Semiconductors MRFE6VP61K25HR6 fornecidas pelos seus distribuidores.
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
Nomes alternativos do fabricante
NXP Semiconductors possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. NXP Semiconductors também pode ser conhecido(a) pelos seguintes nomes:
- NXP
- PHILIPS
- PHIL
- PHI
- PHILLIPS
- NXP USA Inc
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- Philips Semiconductor
- NXP/PHILIPS
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- PHILIPS ECG
- NXP / Freescale
- PHILL
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
3 month trend: -79.59%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
MountScrew
Number of Pins5
Weight13.155199 g
Technical
Continuous Drain Current (ID)10 µA
Current Rating10 µA
Drain to Source Voltage (Vdss)133 V
Frequency230 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Frequency230 MHz
Max Operating Temperature225 °C
Max Power Dissipation1.333 kW
Min Operating Temperature-55 °C
Number of Elements2
Output Power1.25 kW
Schedule B8541290080
Test Current100 mA
Test Voltage50 V
Voltage Rating133 V
Documentos
Baixe as fichas de dados e a documentação do fabricante para NXP Semiconductors MRFE6VP61K25HR6.
Future Electronics
Freescale Semiconductor
Farnell