onsemi MOCD217M

Optocoupler DC-IN 2-CH Transistor DC-OUT 8-Pin SOIC N Box

8-pin SOIC Dual-Channel Phototransistor Output Optocoupler

SOIC8 SMT Dual Channel 30 V 2500 Vrms Phototransistor Optocoupler

Optocoupler; No. of Channels:2; Optocoupler Output Type:Transistor; Package/Case:8-DIP; Leaded Process Compatible:No; Mounting Type:Through Hole; No. of Pins:8; Peak Reflow Compatible (260 C):No; Propagation Delay:7.5µs ;RoHS Compliant: No

The MOCD217M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

OPTOCOUPLER, SMD, DUAL; No. of Channels:2; Voltage, Isolation:3000V; Output Type:Transistor; Input Current:60mA; Voltage, Output Max:30V; Case Style:SOIC-8; Operating Temperature Range:-40°C to +100°C; Approval Bodies:UL; Current, If AV:1mA; External Depth:5.84mm; External Length / Height:3.18mm; No. of Pins:8; Optocoupler Type:Transistor Output; Termination Type:SMD; Time, Fall:5.7µs; Time, Rise:7.5µs; Voltage, Test:3000V; Width, External:6.1mm; Ratio, CTR Min:100%

Channels = 2 / Collector-Emitter Voltage (VCEO) Max. V = 30 / Collector Current Max. mA = 150 / Isolation Voltage kV = 2.5 / Operating Temperature Max. °C = 100 / Current Transfer Ratio (CTR) Min. % = 100 / Operating Temperature Min. °C = -40 / Power Dissipation (Pd) mW = 240 / Forward Voltage (Vf) Max. V = 1.3 / Output Type = Phototransistor / Collector-Emitter Saturation Voltage Max. mV = 400 / Emitter−Collector Voltage (VECO) Max. V = 7 / Forward Current (If) Max. mA = 60 / Package Type = SOIC-8 / Reverse Voltage (Vr) V = 6