onsemi FDC6333C

Transistor MOSFET N/P-Channel 30 Volt 2.5A/2A 6-Pin SuperSOT
Production

Preço e estoque

Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados

Especificações técnicas

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance282 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max95 mΩ
Resistance95 MΩ
Rise Time13 ns
Schedule B8541210080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDC6333C.

element14 APAC
Datasheet8 pages0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Upverter
Datasheet8 pages0 year ago
Technical Drawing1 page6 years ago
onsemi
Datasheet0 page0 year ago
Farnell
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 year ago
TME
Datasheet0 page0 year ago
Newark
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago

Histórico de estoque

3 month trend:
+28.37%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDC6333C.

Peças relacionadas

Descrições

Descrições de onsemi FDC6333C fornecidas pelos seus distribuidores.

Transistor MOSFET N/P-Channel 30 Volt 2.5A/2A 6-Pin SuperSOT
ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
Dual N / P-Channel 30 V 95 mOhm PowerTrench Mosfet - SSOT-6
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • FDC6333C.
  • FDC6333C..
  • FDC6333C...

Especificações técnicas

Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.5 A
Current Rating2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance282 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max95 mΩ
Resistance95 MΩ
Rise Time13 ns
Schedule B8541210080
Threshold Voltage1.8 V
Turn-Off Delay Time11 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FDC6333C.

element14 APAC
Datasheet8 pages0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Upverter
Datasheet8 pages0 year ago
Technical Drawing1 page6 years ago
onsemi
Datasheet0 page0 year ago
Farnell
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Fairchild Semiconductor
Technical Drawing1 page15 years ago
Jameco
Datasheet9 pages16 years ago
iiiC
Datasheet8 pages0 year ago
TME
Datasheet0 page0 year ago
Newark
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago
Datasheet0 page0 year ago

Conformidade

Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Declarações de conformidade
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago