onsemi FDB0105N407L
Production
Preço e estoque
Distribuidores autorizados
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Revendedores não autorizados
Especificações técnicas
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Weight1.312 g
Technical
Continuous Drain Current (ID)460 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance600 µΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance23.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.8 W
Rds On Max800 µΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time117 ns
Turn-On Delay Time45 ns
Dimensions
Height4.9 mm
Inventory History
3 month trend: -0.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FDB0105N407L.
Future Electronics
Farnell
Newark
Upverter
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 5 days ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDB0105N407L.
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Descrições
Descrições de onsemi FDB0105N407L fornecidas pelos seus distribuidores.
Transistor MOSFET N-CH 40V 460A 7-Pin TO-263 T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ
FAIRCHILD SEMICONDUCTOR FDB0105N407L MOSFET Transistor, N Channel, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 VNew
Power Field-Effect Transistor, 460A I(D), 40V, 0.0008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Chip Resistor - Surface Mount 158Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 158 OHM 1% 1/10W 0402
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
MOSFET, N-CH, 40V, 460A, TO-220-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 460A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 600µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -0.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Weight1.312 g
Technical
Continuous Drain Current (ID)460 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance600 µΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance23.1 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation3.8 W
Rds On Max800 µΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time117 ns
Turn-On Delay Time45 ns
Dimensions
Height4.9 mm
Documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FDB0105N407L.
Future Electronics
Farnell
Newark
Upverter