onsemi FCPF099N65S3

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220F
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Preço e estoque

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Especificações técnicas

Physical
MountThrough Hole
Weight2.27 g
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation43 W
Turn-Off Delay Time58 ns
Turn-On Delay Time22 ns
Dimensions
Height19.5 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FCPF099N65S3.

Upverter
Datasheet10 pages4 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet11 pages5 years ago
Future Electronics
Datasheet10 pages4 years ago
Fairchild Semiconductor
Technical Drawing1 page11 years ago
Datasheet0 page0 year ago

Histórico de estoque

3 month trend:
+0.24%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FCPF099N65S3.

Descrições

Descrições de onsemi FCPF099N65S3 fornecidas pelos seus distribuidores.

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 30 A, 99 mΩ, TO-220F
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220FP Tube
Mosfet, N-Ch, 650V, 30A, 150Deg C, 43W Rohs Compliant: Yes |Onsemi FCPF099N65S3
Fuses 0402 (1005 Metric) Surface Mount Board Mount (Cartridge Style Excluded) 0.040 L x 0.020 W x 0.019 H (1.00mm x 0.50mm x 0.48mm) ERB-RD Tape & Reel (TR) Fast Blow 35A 1 (Unlimited) FUSE BOARD MOUNT 2A 32VDC 0402
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Especificações técnicas

Physical
MountThrough Hole
Weight2.27 g
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation43 W
Turn-Off Delay Time58 ns
Turn-On Delay Time22 ns
Dimensions
Height19.5 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi FCPF099N65S3.

Upverter
Datasheet10 pages4 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet11 pages5 years ago
Future Electronics
Datasheet10 pages4 years ago
Fairchild Semiconductor
Technical Drawing1 page11 years ago
Datasheet0 page0 year ago

Conformidade

Classificação ambiental
RoHSCompliant
Declarações de conformidade
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago