Nexperia BSH111BKR
Production
Especificações técnicas
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)210 mA
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)55 V
Fall Time4.8 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation302 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation302 mW
Rds On Max4 Ω
Rise Time8.4 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.6 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.1 mm
Inventory History
3 month trend: +4.53%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documentos
Baixe as fichas de dados e a documentação do fabricante para Nexperia BSH111BKR.
Newark
Nexperia
Future Electronics
Upverter
Supply Chain
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 1 day ago)
Engineering Resources
View Evaluation kits and Reference designs for Nexperia BSH111BKR.
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Descrições
Descrições de Nexperia BSH111BKR fornecidas pelos seus distribuidores.
Trans MOSFET N-CH 55V 0.21A 3-Pin SOT-23 T/R / MOSFET N-CH 55V SOT-23
BSH111 Series 55 V 364 mW 0.5 nC N-Channel Surface Mount MOSFET - SOT-23
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Source Voltage Vds:55V; On Resistance
Small Signal Field-Effect Transistor, 0.21A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 302mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Nomes alternativos do fabricante
Nexperia possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Nexperia também pode ser conhecido(a) pelos seguintes nomes:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NEXP
- NXP/NEXPERIA
- Nexperia USA
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- Nexperi
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/PHILIPS
- NEX-NXP
Inventory History
3 month trend: +4.53%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)210 mA
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance2.3 Ω
Drain to Source Voltage (Vdss)55 V
Fall Time4.8 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation302 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Power Dissipation302 mW
Rds On Max4 Ω
Rise Time8.4 ns
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time12.6 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.1 mm
Documentos
Baixe as fichas de dados e a documentação do fabricante para Nexperia BSH111BKR.
Newark
Nexperia
Future Electronics
Upverter