Infineon BCR523E6327HTSA1
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| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-BCR523E6327 | 25.733 | 1 | Tape & Reel | 18h | ||||||||
| BCR523E6327HTSA1 | 15.000 | 375 | 23h | |||||||||
| BCR523E6327HTSA1CT-ND | 1.061 | 1 | Cut Tape | 1d | ||||||||
| BCR523E6327HTSA1 | 26 | 1 | Cut Tape | 1d | ||||||||
| TDSTD6884 | 3.000 | 3K | 15h |
Especificações técnicas
Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min70
Input Resistance1 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm
Inventory History
3 month trend: -5.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon BCR523E6327HTSA1.
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Descrições
Descrições de Infineon BCR523E6327HTSA1 fornecidas pelos seus distribuidores.
Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R
NPN 50 V 500 mA 100 MHz 330 mW SMT Pre-Biased Bipolar Transistor-PG-SOT23
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
NPN 50V 500mA 100MHz 0.33W; BCR523E6327HTSA1 BCR523E6433HTMA1 BCR523E6433 BCR523E6327
TRANSISTOR, DIGITAL, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:330mW; DC Collector Current:500mA; DC Current Gain hFE:70; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:500mA; Collector Emitter Voltage Vces:300mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:5mA; Full Power Rating Temperature:79°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:70; Hfe Typ:70; No. of Transistors:1; Package / Case:SOT-23; Pin Format:1B, 2E, 3C; Power Dissipation Pd:330mW; Power Dissipation Ptot Max:330mW; Resistance R1:1kohm; Resistance R2:10kohm; SMD Marking:XGs; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:12V; Voltage Vi on @ Ic 2mA:0.4V
NPN Silicon Digital Transistors | Summary of Features: Switching circuit, inverter circuit, driver circuit; Built in bias resistor (R1= 1 k, R2= 10 k); BCR523U: Two (galvanic) internal isolated transistors with good matching in one package; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / DC Current Gain (hFE) = 70 / Power Dissipation (Pd) mW = 330 / Typical Input Resistor kOhm = 1 / Typical Resistor Ratio = 0.1 / Collector-Base Voltage (Vcbo) V = 50 / Collector-Emitter Voltage (Vceo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Operating Frequency MHz = 100
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -5.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Especificações técnicas
Physical
Case/PackageSOT
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min70
Input Resistance1 kΩ
Max Breakdown Voltage50 V
Max Collector Current500 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-65 °C
Number of Elements1
Package Quantity3000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation330 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm
Conformidade
Classificação ambiental
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Declarações de conformidade