NXP Semiconductors BAS16

75V 1.25V@150mA 44ns 150mA SOT-23(TO-236) Switching Diode ROHS

HIGH-SPEED SWITCHING DIODE Rectifier Diode, 1 Phase, 1 Element, 0.215A, 100V V(RRM), Silicon, TO-236AB

DIODE, SWITCHING, SOT-23, 85V, 215MA; Diode Type:Small Signal; Forward Current If(AV):215mA; Repetitive Reverse Voltage Vrrm Max:85V; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Range:-65°C to +150°C; Diode Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Application Code:High Speed; Current If @ Vf:150mA; Current Ifsm:4A; Current Ir Max:30µA; Diode Configuration:Single; Forward Voltage:1.25V; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Pin Configuration:1A,2NC,3K; Power Dissipation Ptot Max:250mW; Reverse Voltage Vr Max:75V; SMD Marking:A6*; Termination Type:SMD; Time on for IFSM:1µs

DIODE, SWITCHING SOT-23; Diode Type:Small Signal; Voltage Vrrm:85V; Av Current If:215mA; Max Voltage Vf:1V; Termination Type:SMD; Case Style:SOT-23; Current If @ Vf:50mA; Diode Configuration:Single; Max Current If:215mA; Max Current Ifs:0.5A; Max Power Dissipation Ptot:250mW; Pin Configuration:1 nc; 2 a; 3 k; SMD Marking:A6 (p,t,W)

Configuration = Single / Reverse Repetitive Voltage Max. (Vrrm) V = 100 / Peak Average Forward Current (If(AV)) mA = 215 / Forward Voltage (Vf) V = 1.25 / Peak Non-Repetitive Surge Current (Itsm) A = 4 / Peak Reverse Current uA = 50 / Reverse Recovery Time (trr) ns = 4 / Power Dissipation (Pd) mW = 250 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Capacitance pF = 1.5 / Thermal Resistance K/W = 500