MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:580mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:-700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:580mA; Current Temperature:25°C; Device Marking:TP0101K; Full Power Rating Temperature:25°C; On State Resistance @ Vgs = 2.5V P Channel:850mohm; On State Resistance @ Vgs = 4.5V P Channel:650mohm; On State Resistance Max:650mohm; Output Power:350mW; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Pulse Current Idm:2A; SMD Marking:K4; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:-1V; Voltage Vgs th Min:-0.5V