Descriptions of VBsemi FDN304P-VB provided by its distributors.
TSMC wafer,JCET (Jiangsu Changjiang Electronics Technology)。PChannel,-20V,-5A,RDS(ON),46mΩ@2.5V,34mΩ@4.5V,20Vgs(±V);-0.6Vth(V) encapsulation:SOT23-6With low drain-Source Resistance、High gate-Characteristics of source voltage and high drain current。It is suitable for various low voltage、Low power power management、Switch control、Signal amplification and circuit protection fields。