Technical
Breakdown Voltage51 V
Cathode Current400 µA
Clamping Voltage70.1 V
Collector Base Voltage (VCBO)-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-200 mA
Drain to Source Voltage (Vdss)-60 V
Dropout Voltage950 mV
Emitter Base Voltage (VEBO)40 V
Forward Voltage1 V
Gain Bandwidth Product1 MHz
Gate to Source Voltage (Vgs)-1.5 V
hFE Min100
Input Capacitance436 pF
Max Forward Surge Current (Ifsm)2.5 A
Max Input Voltage37 V
Max Junction Temperature (Tj)70 °C
Max Operating Temperature125 °C
Max Output Current100 mA
Max Output Voltage36 V
Max Repetitive Reverse Voltage (Vrrm)250 V
Max Reverse Leakage Current1 µA
Max Supply Voltage37 V
Max Switching Frequency150 kHz
Min Operating Temperature0 °C
Min Output Voltage2.5 V
Min Supply Voltage4.5 V
Min Switching Frequency100 Hz
Nominal Output Voltage2.5 V
Nominal Supply Current25 nA
Number of Channels2
Number of Circuits1
Number of Outputs1
Output Current100 mA
Output Voltage5 V
Peak Pulse Current21.4 A
Peak Pulse Power 1.5 kW
Power Dissipation150 mW
Quiescent Current3 mA
Reference TypeShunt
Reference Voltage1.25 V
Response Time1.3 µs
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
Switching Current2 A
Test Current2.5 mA
Zener Voltage75 V