Technical
Breakdown Voltage51 V
Clamping Voltage70.1 V
Collector Base Voltage (VCBO)80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)65 V
Continuous Collector Current100 mA
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Forward Voltage1 V
Gain Bandwidth Product100 MHz
Gate to Source Voltage (Vgs)-1.5 V
hFE Min200
Input Capacitance436 pF
Max Collector Current100 mA
Max Forward Surge Current (Ifsm)2.5 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Max Repetitive Reverse Voltage (Vrrm)250 V
Max Reverse Leakage Current1 µA
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements1
Peak Pulse Current21.4 A
Peak Pulse Power 1.5 kW
PolarityNPN
Power Dissipation200 mW
Reverse Recovery Time50 ns
Reverse Standoff Voltage24 V
Test Current2.5 mA
Transition Frequency100 MHz
Zener Voltage75 V