STMicroelectronics STW19NM50N
$ 2.995
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW19NM50N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-09
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
STMicroelectronicsSTW23NM50N
N-channel 500 V, 0.162 Ohm, 17 A, TO-247 MDmesh(TM) II Power MOSFET
STMicroelectronicsSTW18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247
STMicroelectronicsSTW24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247
Descriptions
Descriptions of STMicroelectronics STW19NM50N provided by its distributors.
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247
STW19NM50N N-CHANNEL MOSFET TRANSISTOR, 14 A, 500 V, 3-PIN TO-247
N-Channel 550 V 0.25 Ohm Flange Mount MDmesh II Power MosFet - TO-247
500 V, 14 A, 0.2 OHM, TO-247 N-CHANNEL MDMESH II POWER MOSFET Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=500 V, 14 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 500V, 14A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time16 ns
Threshold Voltage3 V
Turn-Off Delay Time61 ns
Turn-On Delay Time12 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW19NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant