MOSFET, P CO-PAK; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipatio

Farnell

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Lanka Micro

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

ST MICRO
STM
SGS
SGS THOMSON
INMOS
STMICROE
STMICROEL
STMICR
ST MIC
ST MICROELECTRONIC
SGS THOMPSON
SESCOSEM
STMICROELECT
ST8
STMICROELECTRON
WAFERSCALE
SGS-ATES
ST MICROELECTRONICS SEMI
ST/SGS
ST MICROELECTRO
SGST
THOMS
STMICROELE
WAFERSCALE INTEGRATION INC
SGS-Thomson Microelectronics
ST Microeletronics

Inventory History

Inventory history trend unavailable

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Technical Specifications

Physical

Case/PackageSO

MountSurface Mount

Number of Pins8

Number of Terminals8

Weight4.535924 g

Technical

Continuous Drain Current (ID)4 A

Current Rating4 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance65 mΩ

Drain to Source Voltage (Vds)30 V

Fall Time22 ns

Gate to Source Voltage (Vgs)16 V

Input Capacitance330 pF

Max Operating Temperature150 °C

Max Power Dissipation2 W

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation2 W

Rds On Max55 mΩ

Resistance56 mΩ

Rise Time100 ns

Threshold Voltage1 V

Turn-Off Delay Time25 ns

Turn-On Delay Time11 ns

Voltage Rating (DC)30 V

Dimensions

Height6.35 mm

Length6.35 mm

Width12.7 mm

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics STS4DNFS30L.

Farnell

Datasheet13 pages20 years ago

IHS

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Compliance

Environmental Classification

China RoHSCompliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCAffected

RoHSCompliant