STMicroelectronics STP7N52K3
$ 0.68
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STP7N52K3 | 0 | 5 | Bulk | 13h | |||||||
| Farnell | STP7N52K3 | 0 | 1 | 21h | ||||||||
| Microchip USA | STP7N52K3 | 1,493 | 3500 | Tray | 7d | |||||||
| Component Stockers USA | STP7N52K3 | 498 | >1wk | |||||||||
| Win Source | WS-STP7N52K3 | 150 | 65 | 22h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7N52K3.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Descriptions
Descriptions of STMicroelectronics STP7N52K3 provided by its distributors.
MOSFET N-CH 525V 6A TO220AB / N-Channel 525 V 6A (Tc) 90W (Tc) Through Hole TO-220
STP7N52K3 N-CHANNEL MOSFET TRANSISTOR, 6 A, 525 V, 4-PIN TO-220
N-Channel 525 V 0.85 Ohm SuperMesh III Power MosFet - TO-220
N-channel 525 V, 0.72 Ohm, 6 A, TO-220 SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 525V 6.2A 3-Pin(3+Tab) TO-220 Tube
N-CHANNEL 525 V, 0.84 OHM, 6.3 A, TO-220 SUPERMESH3 POWER MOSFET Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 525V, 6.2A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.3 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance980 mΩ
Drain to Source Voltage (Vdss)525 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance737 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max980 mΩ
Resistance850 mΩ
Rise Time11 ns
Threshold Voltage3.75 V
Turn-Off Delay Time36 ns
Turn-On Delay Time11 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP7N52K3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant