STMicroelectronics STGP20M65DF2
$ 1.097
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Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STGP20M65DF2.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-04-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Descriptions
Descriptions of STMicroelectronics STGP20M65DF2 provided by its distributors.
Trench gate field-stop IGBT M series, 650 V 20 A low loss
Igbt, 650V, 40A, 175Deg C, 166W Rohs Compliant: Yes |Stmicroelectronics STGP20M65DF2
Trans IGBT Chip N-CH 650V 40A 166W 3-Pin(3+Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, TO-220AB
166W 1.55V Freestanding 650V 40A TO-220 Through hole mounting 9.15mm(height)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
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CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Forward Current20 A
Forward Voltage1.85 V
Max Collector Current40 A
Max Operating Temperature175 °C
Max Power Dissipation166 W
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STGP20M65DF2.