STMicroelectronics STGD6M65DF2

Trench gate field-stop IGBT, M series 650 V, 6 A low loss
$ 0.493
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Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGD6M65DF2.

STMicroelectronics

Datasheet20 pages9 years ago

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3 month trend:
-0.70%

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-08-04
Lifecycle StatusProduction (Last Updated: 4 months ago)

Descriptions

Descriptions of STMicroelectronics STGD6M65DF2 provided by its distributors.

Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Insulated Gate Bipolar Transistor, 12A I(C), 650V V(BR)CES, N-Channel, TO-252
IGBT Trench Field Stop 650 V 12 A 88 W Surface Mount DPAK
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R
Igbt |Stmicroelectronics STGD6M65DF2
88W 12A 650V Trench Field Stop TO-252 IGBTs ROHS
TRENCH GATE FIELD-STOP IGBT, M S

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics