STMicroelectronics STF18N60DM2
$ 1.088
Obsolete
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF18N60DM2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-01-28
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-09-10
LTD Date2027-03-10
Descriptions
Descriptions of STMicroelectronics STF18N60DM2 provided by its distributors.
N-channel 600 V, 0.260 Ohm typ., 13 A MDmesh DM2 Power MOSFET in a TO-220FP package
N-Channel 600 V 295 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vds)600 V
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max295 mΩ
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF18N60DM2.