STMicroelectronics BD139-10
BD139 Series 80 V 3 mA Through Hole NPN Epitaxial Transistor - SOT-32
$ 0.189
Production
Inventory History
3 month trend: -11.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD139-10.
CAD Models
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Supply Chain
Country of OriginIndia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 2 months ago)
Descriptions
Descriptions of STMicroelectronics BD139-10 provided by its distributors.
BD139 Series 80 V 3 mA Through Hole NPN Epitaxial Transistor - SOT-32
80V 12.5W 63@150mA,2V 1.5A NPN SOT-32 Bipolar (BJT) ROHS
COMPLEMENTARY LOW VOLTAGE TRANSISTOR Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD139-10 NPN BIPOLAR TRANSISTOR, 3 A, 80 V, 3-PIN SOT-32
Transistor Bipolar NPN 80V 1.5A SOT32
RS APAC
STMicroelectronics NPNTransistor, SOT-32encapsulation, Through hole mounting, Maximum DC collector current3 A, maximum collector-emission voltage80 V
TRANSISTOR, NPN, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:40; Transistor Case Style:SOT-32; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:1.5A; Current Ic hFE:500mA; Full Power Rating Temperature:25°C; Hfe Min:25; No. of Transistors:1; Package / Case:SOT-32; Power Dissipation Pd:1.25W; Power Dissipation Ptot Max:12.5W; Termination Type:SMD; Voltage Vcbo:80V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -11.55%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min63
Max Collector Current1.5 A
Max Operating Temperature150 °C
Max Power Dissipation13 W
Min Operating Temperature-65 °C
Number of Channels1
Number of Elements1
PolarityNPN
Power Dissipation1.25 W
Schedule B8541290080
Transition Frequency250 MHz
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics BD139-10.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant