ROHM HT8KC6TB1
$ 0.728
Production
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2023-07-13
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Descriptions
Descriptions of ROHM HT8KC6TB1 provided by its distributors.
2W 20V Qg 7.6nC@10V 3.9nC@4.5V 1 N-Ch 60V Rds(on) 29mΩ@10V 15A Ciss 460pF@30V HSMT-8 SMD
MOSFET Array, Dual N Channel, 60 V, 15 A, 29 Milliohms, HSMT, 8 Pins
60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
Trans MOSFET N-CH 60V 6.5A 8-Pin HSMT EP
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
场效应管, MOSFET, 双路, N沟道, 60 V, 15A, 14W, HSMT;
60V 15A, DUAL NCH+NCH, HSMT8, PO
Manufacturer Aliases
ROHM has several brands around the world that distributors may use as alternate names. ROHM may also be known as the following names:
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
Technical Specifications
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vds)60 V
Max Operating Temperature150 °C
Max Power Dissipation14 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements2