ROHM HP8MA2TB1

Name: ROHM HP8MA2TB1
Brand: ROHM
SKU: HP8MA2TB1

Transistor MOSFET Array N-CH/P-CH 30V ±18A/±15A 8-Pin HSOP Emboss T/R

$ 0.89

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Distributor		SKU		Min	Pkg
CoreStaff		ST68290011	1,646	1		0.834	0.834	0.573	0.517	0.512	13h
Verical	3	HP8MA2TB1	19	4			1.111	0.944	0.807	0.707
Arrow Electronics		HP8MA2TB1	19	1		1.454	1.111	1.111	1.111	1.111
DigiKey	2	HP8MA2TB1CT-ND	1,391	1	Cut Tape	2.770	1.783	1.222	0.915	0.915
TME	2	HP8MA2TB1	0	1		1.760	1.260	1.050	0.850	0.710	9h

Inventory History

3 month trend: -11.72%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM HP8MA2TB1.

IHS

Datasheet21 pages9 years ago

Newark

Inventory History

3 month trend:

-11.72%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-07-13

Lifecycle StatusProduction (Last Updated: 5 months ago)

Descriptions

Descriptions of ROHM HP8MA2TB1 provided by its distributors.

Transistor MOSFET Array N-CH/P-CH 30V ±18A/±15A 8-Pin HSOP Emboss T/R

Avnet Japan

Power Field-Effect Transistor, 30V, 0.0165ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

7W 20V 2.5V 22nC@ NChannel,25nC@ PChannel N+P 30V 9.6m¦¸@ 10V @ N Channel,17.9m¦¸@ 10V @ P Channelm¦¸ 15A,18A 1.1nF@ 15V @ N Channel,1.25nF@ 15V @ P Channel SOP 1.1mm

Unikeyic (ICkey)

MOSFET, N& P-CH, 30V, HSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Farnell