ROHM DTDG14GPT100

Name: ROHM DTDG14GPT100
Brand: ROHM
SKU: DTDG14GPT100

Power Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

$ 0.191

NRND

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Distributor		SKU		Min	Pkg
CoreStaff		ST73460545	984	1		0.256	0.256	0.219	0.163	0.158	15h
Verical	2	DTDG14GPT100	6,400	100				0.278	0.278	0.278
Arrow Electronics		DTDG14GPT100	3	1		0.127	0.127	0.127	0.127	0.127
DigiKey	3	DTDG14GPT100CT-ND	5,240	1	Cut Tape	0.930	0.580	0.376	0.288	0.288
TME	2	DTDG14GPT100	0	1		0.589*	0.366*	0.276*	0.224*	0.200*	10h

Inventory History

3 month trend: -4.36%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM DTDG14GPT100.

IHS

Datasheet8 pages10 years ago

_legacy Avnet

Farnell

DigiKey

Inventory History

3 month trend:

-4.36%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date1995-04-01

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of ROHM DTDG14GPT100 provided by its distributors.

Power Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

IHS

Trans Digital BJT NPN 70V 1A 2000mW 4-Pin(3+Tab) MPT T/R

Verical

DTDG14GP Series 60 V 1 A Surface Mount NPN Digital Transistor - SC-62

Future Electronics

400mV@ 5mA,500mA NPN - Pre-Biased 2W 5V 500nA 60V 1A MPT-3 4.5mm*2.5mm*1.5mm

UnikeyIC

Continuous a Max:500mA; Voltage, Vce Sat Max:400mV; Power Dissipation:500mW; Min Hfe:300; ft, Typ:80MHz; Case Style:SOT-89; Termination Type:SMD

SHENGYU ELECTRONICS

element14 APAC

TRANSISTOR; DIGITAL;POWER;MPT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:500mA; Voltage, Vce Sat Max:400mV; Power Dissipation:500mW; Min ;RoHS Compliant: Yes

Newark

TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 1A; Base Input Resistor R1: -; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-89; No. of Pins: 3 Pin; Product Range: DTDG14G Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 500mA; DC Collector Current: 500mA; DC Current Gain hFE: 300hFE; Gain Bandwidth ft Typ: 80MHz; Hfe Min: 300; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 500mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-89; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 80MHz

Farnell