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Renesas TP65H070G4RS-TR

Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TOLT, Surface Mount
$ 4.18
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Renesas TP65H070G4RS-TR.

Inventory History

3 month trend:
-0.31%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-10-03
Lifecycle StatusProduction (Last Updated: 3 months ago)

Descriptions

Descriptions of Renesas TP65H070G4RS-TR provided by its distributors.

Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TOLT, Surface Mount
Power Field-Effect Transistor
GAN TRANSISTOR, 650V, 29A, TOLT-16;
650V, 70mohm GaN FET in TOLT
650 V 29 A GAN FET
Gan Transistor, 650V, 29 A, Tolt-16; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Typical Gate Charge:9Nc; Transistor Mounting:Surface Mount; No. Of Pins:16Pins; Product Range:Supergan Series; Qualification:- Rohs Compliant: Yes |Renesas Electronics Corporation TP65H070G4RS-TR

Manufacturer Aliases

Renesas has several brands around the world that distributors may use as alternate names. Renesas may also be known as the following names:

  • Renesas Electronics
  • Renesas Electronics America Inc
  • Renesas Electronics America
  • RENESA
  • REN
  • RENES
  • RENESAS TECHNOLOGY CORP
  • RENESAS TECHNOLOGY
  • Renesas Electronics Corporation
  • RENESAS ELECTRONICS CORP
  • RENSAS
  • RENASAS
  • Renesas / Intersil
  • RNS
  • RENESAS-PB
  • RENESASTEC
  • RENESES
  • Renesas Technology America
  • Renesas Design Germany GmbH
  • Renesas / IDT
  • RENESASE
  • RENESAS TECHNOLOGY HONG KONG
  • Renesas Electronics Operations Services Limited
  • RENEASAS
  • RENESAS/M