Renesas TP65H070G4RS-TR
$ 4.18
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Datasheets & Documents
Download datasheets and manufacturer documentation for Renesas TP65H070G4RS-TR.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-10-03
Lifecycle StatusProduction (Last Updated: 3 months ago)
Descriptions
Descriptions of Renesas TP65H070G4RS-TR provided by its distributors.
Gallium Nitride (GaN) Transistor, 650 V, 29 A, 0.085 ohm, 9 nC, TOLT, Surface Mount
Power Field-Effect Transistor
GAN TRANSISTOR, 650V, 29A, TOLT-16;
650V, 70mohm GaN FET in TOLT
650 V 29 A GAN FET
Gan Transistor, 650V, 29 A, Tolt-16; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Typical Gate Charge:9Nc; Transistor Mounting:Surface Mount; No. Of Pins:16Pins; Product Range:Supergan Series; Qualification:- Rohs Compliant: Yes |Renesas Electronics Corporation TP65H070G4RS-TR
Manufacturer Aliases
Renesas has several brands around the world that distributors may use as alternate names. Renesas may also be known as the following names:
- Renesas Electronics
- Renesas Electronics America Inc
- Renesas Electronics America
- RENESA
- REN
- RENES
- RENESAS TECHNOLOGY CORP
- RENESAS TECHNOLOGY
- Renesas Electronics Corporation
- RENESAS ELECTRONICS CORP
- RENSAS
- RENASAS
- Renesas / Intersil
- RNS
- RENESAS-PB
- RENESASTEC
- RENESES
- Renesas Technology America
- Renesas Design Germany GmbH
- Renesas / IDT
- RENESASE
- RENESAS TECHNOLOGY HONG KONG
- Renesas Electronics Operations Services Limited
- RENEASAS
- RENESAS/M
Technical Specifications
Physical
Number of Terminals16
Technical
Continuous Drain Current (ID)29 A
Drain to Source Resistance85 mΩ
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Datasheets & Documents
Download datasheets and manufacturer documentation for Renesas TP65H070G4RS-TR.