onsemi NVR5124PLT1G
$ 0.235
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +184%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi NVR5124PLT1G provided by its distributors.
P-Channel 60 V 230 mOhm 2.3 nC Surface Mount Power Mosfet - SOT-23
Trans MOSFET P-CH 60V 1.1A Automotive 3-Pin SOT-23 T/R
60V 1.1A 230mΩ@10V,3A 470mW P Channel SOT-23(TO-236) MOSFETs ROHS
onsemi Digital Transistor, SOT-23, SMD
MOSFETs; NVR5124PLT1G; ON SEMICONDUCTOR; -60 V; -1.1 A; 20 V; -470 mW
Cap Ceramic 68pF 50V C0G 5% SMD 0603 125C Paper T/R
Single P Channel Power MOSFET 60V, 1.1;
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
P-Channel JFET, -60V, -1.1A, 230m¦¸, TO-236
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +184%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Number of Terminals3
Technical
Continuous Drain Current (ID)1.1 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance365 mΩ
Drain to Source Voltage (Vds)-60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation470 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation-470 mW
Schedule B8541210080
Turn-Off Delay Time12.2 ns
Turn-On Delay Time6.6 ns
Dimensions
Height1.11 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements