onsemi NVMYS021N06CLTWG
$ 0.445
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -4.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi NVMYS021N06CLTWG.
CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia, Philippines, Thailand, Vietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-03-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi NVMYS021N06CLTWG provided by its distributors.
Single Mosfet Transistors Rohs Compliant: Yes |Onsemi NVMYS021N06CLTWG
Power MOSFET 60 V, 21mΩ, 27 A, Single N-Channel
Trans MOSFET N-CH 60V 9.8A Automotive 5-Pin(4+Tab) LFPAK T/R
MOSFET N-Channel 60V 27A 4-Pin LFPAK T/R
Avnet Japan
onsemi NMOS, Vds=60 V, 27 A, LFPAK,SOT-669, , 4
MOSFET N-CH 60V 9.8A/27A 4LFPAK
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -4.74%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance31.5 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation28 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Turn-Off Delay Time12 ns
Turn-On Delay Time4 ns
Dimensions
Height1.45 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for onsemi NVMYS021N06CLTWG.
Compliance
Environmental Classification
China RoHSNon-Compliant
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements