onsemi NVBG020N090SC1
$ 23.49
Production
Price and Stock
Authorized Distributors
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -1.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi NVBG020N090SC1 provided by its distributors.
200nC@ 15 V 3.7W(Ta),477W(Tc) 4.415nF@450V 28m¦¸@ 60A,15V 900V 4.3V@20mA 19V 1N D2PAK-7
Trans MOSFET N-CH SiC 900V 9.8A Automotive 8-Pin(7+Tab) D2PAK T/R
SiC Power MOSFET N-Channel 900V 112A 7-Pin D2PAK Surface Mount
Avnet Japan
N-Channel 900 V 112 A 477 W Surface Mount Silicon Carbide MOSFET - D2PAK-7L
900V 112A 16m´Î@18V60A 477W 2.6V@20mA 25pF@450V N Channel 4.415nF@450V 200nC@-5~15V -55¡Í~+175¡Í@(Tj) D2PAK-7L MOSFETs ROHS
Power Field-Effect Transistor, 112A I(D), 900V, 0.028ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB
SIC MOSFET, N-CH, 900V, 112A, TO-263-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:112A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:15V; Power Dissipation:477W RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -1.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals7
Technical
Continuous Drain Current (ID)112 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)900 V
Gate to Source Voltage (Vgs)15 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation477 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.7 W
Turn-Off Delay Time58 ns
Turn-On Delay Time39 ns
Dimensions
Height4.9 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
Compliance Statements