onsemi NTLUD4C26NTAG
Obsolete
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-10-23
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Descriptions
Descriptions of onsemi NTLUD4C26NTAG provided by its distributors.
Dual N-Channel µCool™ Power MOSFET 30V 7.3A 21mΩ Power MOSFET 30V, 8.7A, N-Channel, UDFN 2.0x2.0x0.5mm Package
Transistor MOSFET Array Dual N-CH 30V 7.3A 6-Pin uDFN T/R
Avnet Japan
1.7W 12V 1.1V@ 250¦ÌA 9nC@ 4.5V 2N 30V 21m¦¸@ 6A,10V 9.1A 460pF@15V UDFN 2mm*2mm*500¦Ìm
Trans MOSFET N-CH 30V 7A 6-Pin UDFN EP T/R
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, Dual Nch, 30V, 7.3A, Udfn; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0175Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Rohs Compliant: Yes |Onsemi NTLUD4C26NTAG
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Terminals6
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)12 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation720 mW
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time5 ns
Dimensions
Height550 µm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements