onsemi NDC7001C

Name: onsemi NDC7001C
Brand: onsemi
SKU: NDC7001C

Trans Mosfet N/p-ch 60V 0.51A/0.34A 6-PIN TSOT-23 T/r / Mosfet N/p-ch 60V SSOT6

$ 0.165

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Future Electronics	4	NDC7001C	396,000	3K	Tape & Reel					0.191
Avnet	2	NDC7001C	111,000	3K						0.144	1d
Newark	3	NDC7001C	40,292	1	Cut Tape	0.116	0.116	0.116	0.116	0.116
Verical	4	NDC7001C	39,000	3K						0.133
Arrow Electronics	3	NDC7001C	3,889	1		0.288	0.245	0.204	0.165	0.150

Inventory History

3 month trend: +19.10%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDC7001C.

IHS

Datasheet8 pages24 years ago

Datasheet10 pages4 years ago

onsemi

Upverter

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Farnell

Inventory History

3 month trend:

+19.10%

CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1996-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NDC7001C provided by its distributors.

Trans MOSFET N/P-CH 60V 0.51A/0.34A 6-Pin TSOT-23 T/R / MOSFET N/P-CH 60V SSOT6

Win Source

Dual N & P Channel Enhancement Mode Field Effect Transistor 60V

onsemi

Dual N & P-Channel 60 V 2 Ohm SMT Field Effect Transistor - SSOT-6

Future Electronics

Small Signal Field-Effect Transistor, 0.51A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.

Fairchild Semiconductor

MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:340mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.1V; Power Dissipation Pd:700mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Cont Current Id P Channel:340mA; Current Id Max:510mA; Current Temperature:25°C; External Depth:2.92mm; External Length / Height:1.02mm; External Width:2.85mm; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance Max:2ohm; On State Resistance N Channel Max:2ohm; On State Resistance P Channel Max:5ohm; Package / Case:SuperSOT-6; Power Dissipation P Channel 2:700mW; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Pulse Current Idm:1A; SMD Marking:NDC7001C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:50V; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

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