onsemi MJE802G

Name: onsemi MJE802G
Brand: onsemi
SKU: MJE802G

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

$ 0.609

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	MJE802G	0	1	Bulk	0.680	0.680	0.641	0.609	0.609	8h
Farnell	MJE802G	0	1		1.074*	0.916*	0.635*	0.500*	0.500*	7h
Win Source	WS-MJE802G	5,000	30				1.486	1.207	1.207	7h
Worldway Electronics	MJE802G	8,590	7	Bulk		0.478	0.463	0.439	0.439	6h
Aztech	MJE802G	5,188			1.360	1.360	1.360	1.360	1.360	2h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJE802G.

IHS

Datasheet7 pages12 years ago

element14 APAC

onsemi

Arrow Electronics

RS (Formerly Allied Electronics)

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Alternate Parts

This Part

Alternate Parts

onsemiMJE802G

STMicroelectronicsMJE802

Price @ 1000

$ 0.609

$ 0.56

Stock

329,124

151,477

Authorized Distributors

Mount

Through Hole

Case/Package

TO-225

SOT-32

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

4 A

Transition Frequency

1 MHz

Collector Emitter Saturation Voltage

2.5 V

hFE Min

750

100

Power Dissipation

40 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-06-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi MJE802G provided by its distributors.

4.0 A, 80 V NPN Darlington Bipolar Power Transistor

onsemi

TRANSISTOR, DARLINGTON, SI, NPN, POWER, SWITCH, VO 80VDC, VI 5VDC, IO 4ADC, PD 40W

RS (Formerly Allied Electronics)

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin

IHS

MJE Series 80 V 4 A Darlington Complementary Silicon Power Transistor - TO-225

Future Electronics

TRANSISTOR, BIPOL, NPN, 80V, TO-225-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor

Farnell