onsemi KSP10TA
$ 0.046
Production
Inventory History
3 month trend: -0.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi KSP10TA provided by its distributors.
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Transistor, bjt, npn,25V V(Br)Ceo, to-92 Rohs Compliant: Yes |Onsemi KSP10TA
25V 1W 60@4mA10V 650MHz 500mV@4mA400Ã×A NPN +150¡Í@(Tj) TO-92 Bipolar Transistors - BJT ROHS
Trans RF BJT NPN 25V 350mW 3-Pin TO-92 Fan-Fold
Transistor NPN 100nA 25V 350mW hFE=60 TO92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)25 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency650 MHz
Gain Bandwidth Product650 MHz
hFE Min60
Max Breakdown Voltage25 V
Max Collector Current4 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation350 mW
Transition Frequency650 MHz
Voltage Rating (DC)25 V
Dimensions
Height8.77 mm
Length4.58 mm
Width3.86 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements