onsemi KSD880YTU
$ 0.363
EOL
Inventory History
3 month trend: -0.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 23 hours ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 23 hours ago)
Related Parts
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onsemiKSD2012YTU
Tube Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 500mA 5V 100muA ICBO 25W 3MHz
Descriptions
Descriptions of onsemi KSD880YTU provided by its distributors.
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 60V 3A 30000mW 3-Pin(3+Tab) TO-220 Tube
NPN Epitaxial Silicon Transistor
TRANS, NPN, 60V, 3A, 150DEG C, 30W; Available until stocks are exhausted
Npn/3A/60V To-220 Rohs Compliant: Yes
onsemi NPN, TO-220, , 3 A, -60 V
晶体管, NPN, 60V, 3A, 150度 C, 30W;
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -0.34%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min100
Max Collector Current3 A
Max Frequency1 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation30 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)60 V
Dimensions
Height20.4 mm
Length9.9 mm
Width4.5 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements