onsemi KSC2383YTA
KSC2383 Series 160 V 1 A NPN Through Hole Epitaxial Silicon Transistor -TO-92L-3
$ 0.174
Production
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Inventory History
3 month trend: +33.35%
CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi KSC2383YTA provided by its distributors.
KSC2383 Series 160 V 1 A NPN Through Hole Epitaxial Silicon Transistor -TO-92L-3
Bipolar Transistors - BJT NPN Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR,BJT,NPN,160V V(BR)CEO,1A I(C),TO-92;
Trans GP BJT NPN 160V 1A 900mW 3-Pin TO-92L Fan-Fold
General Purpose Transistor, TO-92, NPN, 160V
1Ã×A 160V 900mW 1A 160@500mA2V 100MHz 1.5V@500mA50mA NPN +150¡Í@(Tj) TO-92-3 Bipolar Transistors - BJT ROHS
onsemi NPNTransistor, TO-92encapsulation, Through hole mounting, Maximum DC collector current1 A, maximum collector-emission voltage160 V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +33.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight371.1027 mg
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)160 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min160
Max Breakdown Voltage160 V
Max Collector Current1 A
Max Frequency1 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation900 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height11.6 mm
Length4.9 mm
Width3.9 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements