onsemi FGA20S120M

Name: onsemi FGA20S120M
Brand: onsemi
SKU: FGA20S120M

Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail

$ 1.946

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Verical	2	FGA20S120M	106,019	155					2.163	2.038
Rochester Electronics		FGA20S120M	378,450					1.940	1.730	1.630	1d
Microchip USA		FGA20S120M	162	150	Bulk				13.455	13.455	7d
Component Stockers USA		FGA20S120M	632,008			2.170	2.170	2.050	1.850	1.850	>1wk
Win Source		WS-FGA20S120M	2,000	18				2.511	2.176	2.176	4h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FGA20S120M.

IHS

Datasheet8 pages13 years ago

Newark

element14 APAC

onsemi

Farnell

Inventory History

3 month trend:

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Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Descriptions

Descriptions of onsemi FGA20S120M provided by its distributors.

Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail

Verical

1200V, 20A, Shorted-anode IGBT

onsemi

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT TRENCH FS 1200V 40A TO-3P

DigiKey Marketplace

IGBT,N CH,1200V,40A,TO3PN; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:348W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:348W

Farnell

Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

Fairchild Semiconductor