onsemi FDMC86260ET150
$ 1.233
Production
Price and Stock
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SKU
Min
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Bulk Pricing
Inventory History
3 month trend: -73.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-01-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Single N-Channel 150 V 58 mOhm 21 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Descriptions
Descriptions of onsemi FDMC86260ET150 provided by its distributors.
N-Channel Power Trench® MOSFET 150V, 25A, 34mΩ
2.8W(Ta)，65W(Tc) 20V 4V@ 250µA 21nC@ 10 V 1individualNChannel 150V 34mΩ@ 5.4A,10V 5.4A，25A 1.33nF@75V QFN SMD mount 3.3mm*3.3mm*800μm
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -73.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance34 mΩ
Drain to Source Voltage (Vds)150 V
Element ConfigurationSingle
Fall Time3.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.8 W
Rds On Max34 mΩ
Rise Time2 ns
Schedule B8541290080
Turn-Off Delay Time17 ns
Turn-On Delay Time9.5 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCAffected
RoHSCompliant
Compliance Statements