onsemi FDMC6686P
$ 0.93
Production
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-06
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
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Descriptions
Descriptions of onsemi FDMC6686P provided by its distributors.
P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ
Power Field-Effect Transistor, 56A I(D), 20V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
2.3W(Ta)，40W(Tc) 8V 1V@ 250µA 122nC@ 4.5 V 1individualPChannel 20V 4mΩ@ 18A,4.5V 18A，56A 13.2nF@10V SMD mount 750μm(height)
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Mosfet, P-Ch, -20V, -56A, 40W, Power 33; Transistor Polarity:P Channel; Continuous Drain Current Id:-56A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-750Mv; Rohs Compliant: Yes |Onsemi FDMC6686P
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight26.8 mg
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vds)-20 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)8 V
Input Capacitance13.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max4 mΩ
Schedule B8541290080
Turn-Off Delay Time317 ns
Turn-On Delay Time25 ns
Dimensions
Height800 µm
Compliance
Environmental Classification
China RoHSNon-Compliant
REACH SVHCAffected
RoHSCompliant
Compliance Statements