Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-05-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
Related Parts
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
InfineonIPD50N03S2L06ATMA1
30V, N-Ch, 6.4 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Descriptions
Descriptions of onsemi FDD6672A provided by its distributors.
Trans MOSFET N-CH 30V 65A 3-Pin(2+Tab) TO-252AA T/R
MOSFET N-CH 30V 65A D-PAK
Power Field-Effect Transistor, 65A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.2V; Power Dissipation P
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: Restocked
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)65 A
Current Rating65 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance5.07 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Channels1
Number of Elements1
Power Dissipation1.3 W
Rds On Max8 mΩ
Rise Time18 ns
TerminationSMD/SMT
Turn-Off Delay Time69 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)30 V
Dimensions
Height2.51 mm
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements