onsemi ATP301-TL-H
$ 5.44
Production
Price and Stock
Authorized Distributors
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Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-25
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi ATP301-TL-H provided by its distributors.
ATP301-TL-H P-CHANNEL MOSFET TRANSISTOR, 28 A, 100 V, 3-PIN ATPAK
Single P-Channel 100 V 75 mOhm 73 nC 70 W Silicon Surface Mount Mosfet
Power MOSFET, P-Channel, -100V, -28A, 75mΩ
MOSFET, P CH, 100V, 28A, ATPAK; Transistor Polarity:P; Current Id Max:-28A; Drain Source Voltage Vds:-100V; On State Resistance:57mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:70W; Transistor Case ;RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin Bismuth
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vds)-100 V
Element ConfigurationSingle
Fall Time190 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max75 mΩ
Rise Time130 ns
Schedule B8541290080
TerminationSMD/SMT
Turn-Off Delay Time330 ns
Turn-On Delay Time32 ns
Dimensions
Height1.5 mm
Length6.5 mm
Width7.3 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements