NXP Semiconductors PUMH16

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon

100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:47kohm; Res

TRANSISTOR, DIGITAL, DUAL, SOT-363; Transistor Type:Digital Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100A; Voltage, Vce Sat Max:150mV; Power Dissipation:200mW; Min ;RoHS Compliant: Yes

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMH16 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Full Power Rating Temperature: 25°C; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 22kohm; Resistance R1 PNP: 22kohm; Resistance R2: 47kohm; Transistor Case Style: SOT-363; Voltage Vcbo: 50V