NXP Semiconductors BSH103
NRND
Inventory History
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CAD Models
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Alternate Parts
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CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-20
Lifecycle StatusNRND (Last Updated: 1 month ago)
Descriptions
Descriptions of NXP Semiconductors BSH103 provided by its distributors.
Power Field-Effect Transistor, 0.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 30V 0.85A 3-Pin TO-236AB T/R
850 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:400mV; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:920mA; Current Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:750mW; Power Dissipation Ptot Max:500mW; Pulse Current Idm:3.4A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:2.5V
Manufacturer Aliases
NXP Semiconductors has several brands around the world that distributors may use as alternate names. NXP Semiconductors may also be known as the following names:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)850 mA
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs400 mV
Number of Elements1
Power Dissipation750 mW
TerminationSMD/SMT
Threshold Voltage400 mV
Compliance
Environmental Classification
China RoHSCompliant
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements