Nexperia BC857AM,315
$ 0.04
Production
Price and Stock
Authorized Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -2.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-11
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
Related Parts
Toshiba2SA2154CT-GR,L3F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Descriptions
Descriptions of Nexperia BC857AM,315 provided by its distributors.
PNP Transistor 400mV@5mA,100mA 430mW 5V 15nA 50V 45V 100mA SOT-883 SMD 1.02mm × 620μm × 470μm
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 45V 0.1A Automotive 3-Pin DFN T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC857AM,315
BC857M Series 45V 100mA 430mW SMT PNP General-Purpuse Transistor - DFN-1006-3
45 V, 100 mA PNP general-purpose transistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Manufacturer Aliases
Nexperia has several brands around the world that distributors may use as alternate names. Nexperia may also be known as the following names:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
Inventory History
3 month trend: -2.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-883
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min125
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation430 mW
Transition Frequency100 MHz
Dimensions
Height500 µm
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements