Littelfuse IXFN82N60P

Single N-Channel 600 V 1040 W 240 nC Silicon Chassis Mount Mosfet - SOT-227B

Trans MOSFET N-CH 600V 72A 4-Pin SOT-227B

Power Field-Effect Transistor, 82A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

N-Ch 600V 72A 1040W 0,075R SOT227B

IXYS NChannel EnhancedMOSTube HiperFET, Polarseries, Vds=600 V, 72 A, SOT-227encapsulation, Thread, 4Pin

Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), SOT-227B, RoHS

DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini

|Ixys Semiconductor IXFN82N60P

MOSFET, N, SOT-227B; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:82A; Resistance, Rds On:0.75ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOTOP; Termination Type:Screw; N-channel Gate Charge:240nC; No. of Pins:4; Power, Pd:1040W; Thermal Resistance, Junction to Case A:0.12°C/W; Typ Capacitance Ciss:23000pF; Voltage, Vds Max:600V; Time, trr Max:200ns

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 72 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Threshold Voltage V = 5 / Gate-Source Voltage V = 30 / Power Dissipation (Pd) kW = 1.04 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 24 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 79 / Turn-ON Delay Time ns = 28 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260