Littelfuse IXFN82N60P

Name: Littelfuse IXFN82N60P
Brand: Littelfuse
SKU: IXFN82N60P

Single N-Channel 600 V 1040 W 240 nC Silicon Chassis Mount Mosfet - SOT-227B

$ 31.08

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
DigiKey		238-IXFN82N60P-ND	867	1	Tube	46.960	35.274	31.077	31.077	31.077
TME	2	IXFN82N60P	0	1		43.509*	40.189*	40.189*	40.189*	40.189*	2d
TTI		IXFN82N60P	0	300	Tube				31.080	31.080	13h
Onlinecomponents.com		IXFN82N60P	0	75	Bulk			77.830	27.680	27.680
RS (Formerly Allied Electronics)		IXFN82N60P	0	10	Bulk		41.810	38.470	38.470	38.470	2h

Inventory History

3 month trend: -100%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Littelfuse IXFN82N60P.

Newark

Datasheet6 pages13 years ago

IHS

ARCEL Power Electronics

Arrow Electronics

TME

Inventory History

3 month trend:

-100%

Supply Chain

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

VishayVS-FA72SA50LC

Trans MOSFET N-CH 500V 72A 4-Pin SOT-227

Details

VishayVS-FA40SA50LC

543W(Tc) 20V 4V@ 250¦ÌA 420nC@ 10 V 1N 500V 130m¦¸@ 23A,10V 40A 6.9nF@25V SOT-227

Details

Descriptions

Descriptions of Littelfuse IXFN82N60P provided by its distributors.

Single N-Channel 600 V 1040 W 240 nC Silicon Chassis Mount Mosfet - SOT-227B

Future Electronics

Mosfet, N-Ch, 600V, 72A, Sot-227B; Channel Type:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:600V; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:1.04Kw Rohs Compliant: Yes |Ixys Semiconductor IXFN82N60P

Newark

MOSFET, N, SOT-227B; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:82A; Resistance, Rds On:0.75ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOTOP; Termination Type:Screw; N-channel Gate Charge:240nC; No. of Pins:4; Power, Pd:1040W; Thermal Resistance, Junction to Case A:0.12°C/W; Typ Capacitance Ciss:23000pF; Voltage, Vds Max:600V; Time, trr Max:200ns

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 72 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Threshold Voltage V = 5 / Gate-Source Voltage V = 30 / Power Dissipation (Pd) kW = 1.04 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 24 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 79 / Turn-ON Delay Time ns = 28 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260

Distrelec