International Rectifier IRFD9014PBF

MOSFET, Power;P-Ch;VDSS -60V;RDS(ON) 0.5Ohm;ID -1.1A;HD-1;PD 1.3W;VGS +/-20V;-55

Transistor MOSFET P-CH 60V 1.1A 4-Pin HVMDIP

Power Field-Effect Transistor, 1.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.1A; On Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:HD-1 ;RoHS Compliant: Yes

MOSFET, P, DIL; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:-1.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Pin Format:4; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:8.8A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V