Infineon ISC014N08NM6ATMA1

Mosfet, N-Ch, 80V, 279A, Tson; |Infineon Technologies ISC014N08NM6ATMA1

80 V 30 A 3W Surface Mount N-Channel OptiMOSTM 6 Power-Transistor - PG-TSON-8-5

Power Field-Effect Transistor, 279A I(D), 80V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering.Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on) and ~40% improved FOMQg x RDS(on) and FOMQgd x RDS(on) in SuperSO8 The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction.Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).