Infineon ISC012N04LM6ATMA1

Power MOSFET, N Channel, 40 V, 238 A, 0.001 ohm, TDSON, Surface Mount

OptiMOS 6 Series 40 V 37 A 1.2 mOhm 3 W Single N-Channel MOSFET - TDSON-8FL

Trans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R

Power Field-Effect Transistor, 238A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon ISC012N04LM6ATMA1 MOSFET

Infineon NChannel EnhancedMOSTube ISCseries, Vds=40 V, 238 A, TDSON-8 FLencapsulation, surface mount, 8Pin

TRENCH <= 40V PG-TDSON-8 / N-Channel 40 V 37A (Ta), 238A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TDSON-8 FL

MOSFET, N-CH, 40V, 238A, TDSON;

The ISC012N04LM6 OptiMOSTM 6 40V in logic level is setting a new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.