Infineon IRLMS1902PBF
Production
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Descriptions
Descriptions of Infineon IRLMS1902PBF provided by its distributors.
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, LOGIC, MICRO-6; Transistor type:MOSFET; Current, Id cont:3.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:Micro6; Capacitance, Ciss typ:300pF; Charge, Qrr typ @ Tj = 25C:37nC; Charge, gate RoHS Compliant: Yes
MOSFET, N, LOGIC, MICRO-6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µSOIC; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Capacitance Ciss Typ:300pF; Charge Qrr @ Tj = 25°C Typ:37nC; Current Id Max:3.2A; Current Temperature:25°C; External Depth:3.00mm; External Length / Height:1.45mm; External Width:3.00mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:4.7nC; Package / Case:Micro6; Power Dissipation Pd:1.7W; Power Dissipation Pd:1.7W; Pulse Current Idm:18A; Rate of Voltage Change dv / dt:5V/ns; Reverse Recovery Time trr Typ:40ns; SMD Marking:2A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
MountReverse
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Max Operating Temperature150 °C
Max Power Dissipation780 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Elements1
PackagingCut Tape
Power Dissipation1.7 W
Reverse Recovery Time40 ns
Threshold Voltage700 mV
Dimensions
Width3 mm
Compliance
Environmental Classification
China RoHSCompliant
REACH SVHCYes
RoHSCompliant
Compliance Statements