Infineon IRF9910TRPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF9910TRPBF | 0 | 4K | Bulk | 16h | |||||||
| Component Stockers USA | IRF9910TRPBF | 4,234 | >1wk | |||||||||
| Weyland Electronics Group Pte. Ltd. | IRF9910TRPBF | 13,490 | 1 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRF9910TRPBF | 12,700 | 22 | 3h | ||||||||
| Worldway Electronics | IRF9910TRPBF | 13,675 | 7 | Tape & Reel | 1d |
CAD Models
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Related Parts
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MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V
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Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 3.7Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
Descriptions
Descriptions of Infineon IRF9910TRPBF provided by its distributors.
Transistor MOSFET Array Dual N-CH 20V 10A/12A 8-Pin SOIC T/R
Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance13.4 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs2.55 V
Number of Channels2
Number of Elements2
On-State Resistance13.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max9.3 mΩ
Resistance13.4 MΩ
Schedule B8541290080
Voltage Rating (DC)20 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements