Infineon IRF7342D2PBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-09
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2015-12-04
LTD Date2016-03-04
Descriptions
Descriptions of Infineon IRF7342D2PBF provided by its distributors.
Single P-Channel 55 V 105 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET+DIODE, P CH, 55V, 3.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:55V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.4A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:-55V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:-10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.4 A
Current Rating-3.4 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vds)-55 V
Dual Supply Voltage-55 V
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2 W
Rds On Max105 mΩ
Resistance105 MΩ
Rise Time10 ns
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)-55 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements