Infineon IPZA65R029CFD7XKSA1
$ 7.948
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Inventory History
3 month trend: -46.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-06-29
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Descriptions
Descriptions of Infineon IPZA65R029CFD7XKSA1 provided by its distributors.
Mosfet, N-Ch, 650V, 69A, To-247; |Infineon Technologies IPZA65R029CFD7XKSA1
305W(Tc) 20V 4.5V@1.79mA 145nC@10V 1 N-Ch 650V 29mΩ@35.8A,10V 69A 7.149nF@400V TO-247-4 TH
Power Field-Effect Transistor, 69A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -46.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
Number of Terminals4
Technical
Continuous Drain Current (ID)69 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vds)700 V
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation305 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation305 W
Turn-Off Delay Time159 ns
Turn-On Delay Time54 ns
Dimensions
Height25.27 mm
Compliance
Environmental Classification
China RoHSCompliant
REACH SVHCUnaffected
RoHSCompliant
Compliance Statements