Infineon IPZA65R018CFD7XKSA1

Transistor MOSFET N-Channel 650V 106A 4-Pin PG-TO-247 Tube

Power Field-Effect Transistor, 106A I(D), 650V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Infineon NChannelMOSTube CoolMOSseries, Vds=700 V, 106 A, TO-247-4encapsulation, Through hole mounting, 4Pin

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.