Infineon IPDD60R180CM8XTMA1
$ 1.132
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Country of OriginGermany, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2024-03-22
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Descriptions
Descriptions of Infineon IPDD60R180CM8XTMA1 provided by its distributors.
Power MOSFET, N Channel, 600 V, 21 A, 0.18 Ohm, HDSOP, 10 Pins, Surface Mount
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
Trans MOSFET N-CH 600V 21A 10-Pin HDSOP EP T/R
Infineon IPDD60R180CM8XTMA1 MOSFET
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Number of Terminals10
Technical
Continuous Drain Current (ID)21 A
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vds)600 V
Max Operating Temperature150 °C
Max Power Dissipation169 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1